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Description
Datasheet The MGF0915A GaAs FET with an N-channel schottky. Gate, is designed for use L & S band amplifiers. FEATURES. High output power. Po=36.5dBm(TYP.) MITSUBISHI. Date. : 8 th. Dec. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915A . Sample history:. May 25, 2005 RF characteristics data of MGF0915A for Freq.=2.11-2.17GHz band. HIGH FREQUENCY & OPTICAL DEVICE WORKS. MITSIBISHI ELECTRIC MITSUBISHI. Date. : 5 th. Apr. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915.A. Sample history:. MITSUBISHI. Date. : 8 th. Dec. 2005. SUBJECT: SUMMARY: This application note show the RF characteristics data of MGF0915A . Sample history:.
| Part Number | MGF0915A |
| Brand | Mitsubishi Electric |
| Image |  |
MGF0915A
MITSU
16000
0.16
Finestock Electronics HK Limited
MGF0915A
MITSUBSHI
1255
1.5525
CIS Ltd (CHECK IC SOLUTION LIMITED)
MGF0915A
MTSUBISH
20
2.945
FLOWER GROUP(HK)CO.,LTD
MGF0915A
MITS
7522
4.3375
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
MGF0915A
MITSUBISH
500
5.73
Quanzhou Yingtron Microwave Electronics Co.,Ltd
