Mitsubishi Electric

Description

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility. Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is MGF4941CL . MGF4965BM. MGF4964BL. MGF4941AL. MGF4937AM. MGF4936AM. MGF4935AM. MGF4934CM. MGF4921AM . 2.40. 0.95. 0.65. 0.35 . 0.35. Dec 9, 2008 (HEMT), the MGF4921AM , highly suitable for low noise amplifiers in satellite digital radio reception systems. This product can also be used in QL-1104E-B. Top View. Electrodes direction: Gate. Source. Drain. MGF4935AM. E. MGF4934AM/BM. B. MGF4921AM . C. MGF4934CM. D. MGF4931AM. QL-1079E-D. 1. Outline Drawing. Unit : mm. 4pin flat lead packaged device ( MGF4921AM & MGF493xxM series) : GD-30. 0.65 0.60. 0.65 0.65. 0.30. +0.1. - 0.05.